PFZ(Premium Float Zone Silicon)is doped with dopant gass when you pull silicon single crystal.
Topsil is confident that they provide you high quality and high purity
wafers.
|
0.5 - 100 Ω cm |
100 - 500 Ω cm |
500 - 5000 Ω cm |
|
| Diamter |
100mm, 125mm, 150mm |
| Crystal Orienatation |
＜100＞or <111>* |
| Type （Dopant） |
P(Boron) or N(Phosphorus) |
| Resistivity variation |
± 8% |
± 10% |
± 20% |
| RRV |
< 8% |
< 10% |
< 20% |
| Growth striation |
± 10% |
± 10% |
± 15% |
| Carrier lifetime |
> 500 μsec |
> 1,000μsec |
> 1,000μsec |
| Oxygen and Carbon concentration |
＜1.0 × 1016atoms/cm3 |
*6inch <111> is still under development
Application
・Power discrete, diode ・Automotive power devices ・MEMS
Hi-Res Silicon is developed for RF IC and RF-MEMS and resistivity is quite
high.
It meets requests for low defects and high-efficiency which are required
for RF devices
and also price is aaaractive if you compare with that of compound semiconductors.
|
|
| Specification |
Guaranteed specification |
|
| Diameter |
100mm, 125mm, 150mm |
| Crystal Orientation |
＜100＞or <111>* |
Type（Dopant）
|
P(Boron) or N(Phosphorus) |
Resistivity
|
8,000 ～ 30,000 Ω cm |
| Resistivity variation |
± 20% |
| RRV |
< 25% |
| Carrier lifetime |
> 1,000µsec |
Oxygen concentration
|
< 1.0 × 1016 atoms/cm3 |
| Carborn concentration |
< 2.0 × 1016 atoms/cm3 |
*6inch<111> is under development
Application
・MMIC ・PIN diodes, HBT, Schottky diodes ・GHz power
amplifier
・RF-MEMS for Mobile phone, GPS, Base station
TOPSIL is the first manufacture who introduced NTD FZ silicon in the world.
NTDsilicon (neutron
transmutation doping) has excellent resistivity uniformity and started
to be used for thyrister devices
Silicon-controled rectifier) and now is used for semiconductor power devices,
industrial field and the field
of houshold applicancies.,
|
| Specification |
Guaranteed specification |
|
| Diameter |
50mm, 75mm, 100mm, 125mm, 150mm |
| Crystal orientation |
＜100＞or <111>* |
| Type（Dopant） |
N(Phosphorus) |
| Resistivity |
5 ～ 4,000 Ω cm |
| Resistivity variation |
± 5～10％ |
| RRV |
< 3－8% |
| Carrier lifetime |
> 200µsec |
| Oxygen concentration |
< 1.0 × 1016 atoms/cm3 |
| Carbon concentration |
< 2.0 × 1016 atoms/cm3 |
*6 inch<111>is under development
Applicaion
・High Power Electronics ・Automotive Consumer ・IGBT Inverters>1kW
・Smart Power ・Low Power Thyristors
HiTran silicon is best suited for IR application as it contains few contamination and resistivity is pretty high.
If you compare oxygen concentration of CZ silicon and FZ silicon, CZ silicon
for optical application contain
（６.0×１017 atoms/ｃｍ3） while HiTran silicon contains (５.0×1015 atoms/ｃｍ3) and has good transmission. |
| Crystal Orientation |
（100）,(111)±0.5° |
| Transmission |
＞50%（30－10000 μm） |
| Diameter |
1－150mm |
| Shape |
Custom made |
| Finish |
As-Cut-polished |
| Oxygen and Carbon concentration |
＜1.0 × 1016 atoms/ｃｍ3 |
Application
・Thermal imaging system ・Silicon prisms, Gratings, Grisms, Lenses and Blanks
・Passive infrared detector filters ・Transmission windows for debris protection
We can also offer you silicon material for sensor devices which ingot carrier
lifetime is over 3000micro sec.
We also have silicon for Litium Drift applications and filmed wafersna
and defused wafers etc.
Please feel free to ask us anytime for any inquiries.
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