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「Compound Semiconductor」

SiGe: 4 & 8 inch　Ge concentration: approx. 10-40%　* We can also use SOI wafers as substrates.　
Ge: 2-6 inch　Orientation: <100>, <111>
GeEpi: 4,6 & 8inch　* We can also use SOI wafers as substrates.　
GaAs: 2-6 inch
GaP: 2 inch
InP: 3 & 4 inch (ex. 3inch, CC range: 0.8-4E18�p³, EPD: below 500pcs/cm²)
InSb: 2 inch
ZnO: 20 mm x 20 mm, 10 mm x 10 mm, 5 mm x 5 mm etc.
MgO: 2 inch
InAs: 2 inch
GaSb: 2-4 inch
Nitride EPI: 4-8 inch
CdZnTe: 2-4 inch
GaInP: 2-6 inch

Other materials: GaAlAs,LaAlO3, Al2O3, LAO,LiNbO3,CdTe,LiTaO3,LN,ZnSe　etc.

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